| PART |
Description |
Maker |
| 1N5524 1N5532 1N5540C 1N5541C 1N5539C 1N5543C 1N55 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. -5% tolerance.
0.4W LOW VOLTAGE AVALANCHE DIODES
0.4 W, low voltage avalanche diode. Nominal zener voltage 17.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -1% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 14.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -20% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4W LOW VOLTAGE AVALANCHE DIODES 0.4瓦，低电压雪崩二极管
0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 24.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 20.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. -2% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 13.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 22.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. -10% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. -5% tolerance.
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. -10% tolerance.
|
Jinan Gude Electronic D...
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic Device Co., Ltd.
济南固锝电子器件有限公司
JGD[Jinan Gude Electronic Device]
|
| 6249-12-0 6249-24-0 6249-48-0 6249-24-2 6249-12-2 |
Test Clip To Multi-Stacking Banana Plug Test Lead
|
Pomona Electronics
|
| IT3M-200S-BGA IT3D-200S-BGA IT3D-300S-BGA IT3M-300 |
IT3 Test Vehicle Assembly Yield Test
|
Hirose Electric
|
| MK25-1A46-3500W MK25-1A46-BV03500 9250003500 |
RH <45 %, 100 V test voltage
|
Meder Electronic
|
| CF-10-WHEEL-SET-PU |
2 replacement rolls for CUTFOX 10, with PU tread, for sensitive cables/conductors and their insulation (for hard insulation to some extent)
|
PHOENIX CONTACT
|
| MG90V2YS40 |
WIRE, ETFE, TEFZEL, 14AWG, WHITE, 100M; Area, conductor CSA:1.675mm2; Conductor make-up:37/0.250; Voltage rating, AC:600V; Current rating:23A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 0040.1211 0040.1212 0040.1213 |
TEST JACKS, TEST PROBES
|
Schurter Inc.
|
| 0040.1022 0040.1023 0040.1021 40.1024-ND 0040.1151 |
TEST JACKS, TEST PROBES
|
Schurter Inc.
|
| AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基
1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
| AFBR-3950XXRZ |
High Voltage Galvanic Insulation Link for DC to 50 MBaud
|
Broadcom Corporation.
|
| AMS431L AMS431LA AMS431LAL AMS431LAM AMS431LAM1 AM |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:30A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:Yes .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.06ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No .2V并联稳压
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:25A; On-Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No RoHS Compliant: No
1.2V SHUNT REGULATOR
|
Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
|
|
