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IRG7PH35UD1-EP - 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

IRG7PH35UD1-EP_8496177.PDF Datasheet


 Full text search : 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode


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IRG7PH35UD1-EP 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
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IRF[International Rectifier]
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
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1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
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Fairchild Semiconductor Corporation
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IRG7PH35UD1-EP speed IRG7PH35UD1-EP Electronic IRG7PH35UD1-EP datasheet online IRG7PH35UD1-EP connector IRG7PH35UD1-EP Table
 

 

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