| PART |
Description |
Maker |
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG330P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., L...
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AMS2301A |
Super high density cell design for extremely low
|
Advanced Monolithic Systems Ltd
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| EKL |
Aluminum Electrolytic Capacitors, Radial Style, Polarized AI Electrolytic Capacitor, Extremely Long Lifetime, High Temp Range (125°C), High AC Rating
|
Vishay
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
