| PART |
Description |
Maker |
| XN04212 XN4212 |
Silicon NPN epitaxial planer transistor
Composite Device - Composite Transistors
|
Panasonic Semiconductor
|
| XP04115 XP4115 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XN01119 XN1119 |
Composite Device - Composite Transistors
From old datasheet system
Silicon PNP epitaxial planer transistor
|
Panasonic Semiconductor
|
| XN04322 UNR1122 XN4322 UN1222 UNR1222 |
Composite Device - Composite Transistors
Composite Transistors Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2)
|
PANASONIC[Panasonic Semiconductor]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| BYW32 BYW36 BYW35 BYW33 BYW34 |
Fast Silicon Mesa Rectifiers
From old datasheet system
Composite Data, Audio, Video, Security & Control Cable; Composite Conductor Types:2 Coaxial 8 Pairs 2 Fibers; Number of Conductors:18; Conductor
Composite Cable; Composite Conductor Types:2 Coaxial 8 Pairs; Number of Conductors:18; Conductor Size AWG:24-18; No. Strands x Strand Size:Solid
Composite Data, Audio, Video, Security & Control Cable; Composite Conductor Types:2 Coaxial 8 Pairs; Number of Conductors:18; Conductor Size AWG
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
Vishay Telefunken
|
| XN0A312 XN1A312 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
| XN0111F XN0111FXN111F |
From old datasheet system
Composite Device - Composite Transistors
|
panasonic
|
| XN4113 XN04113 0774 XN04113XN4113 |
Composite Device - Composite Transistors
From old datasheet system
|
Matsshita / Panasonic
|
| XP0111F |
Composite Device - Composite Transistors 复合设备-复合晶体
|
IRC Advanced Film
|
