| PART |
Description |
Maker |
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| MRF9100R3 MRF9100 MRF9100SR3 |
GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF9100, MRF9100R3, MRF9100SR3 GSM/EDGE 900 MHz, 110 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| ZA2CS-10-20W |
High Power Combiner 2 Way-0 50楼? 900 to 1000 MHz
High Power Combiner 2 Way-0 50Ω 900 to 1000 MHz
|
Mini-Circuits
|
| BLM6G10-30 BLM6G10-30G |
W-CDMA 900 MHz - 1000 MHz power MMIC
|
NXP Semiconductors
|
| RF6100-2 |
RF Micro Devices 3V 900 MHz Linear Amplifier 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| PBL40310 |
3.5 V GSM 900 MHz Power Amplifier
|
ERICSSON[Ericsson]
|
| RF106 |
RF106 900 MHz Power Amplifier
|
Conexant Systems, Inc.
CONEXANT[Conexant Systems Inc]
|
| BGD906MI BGD906 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CFK2162-P1-000T |
800 to 900 MHz, 34 dBm, power GaAs FET
|
CELERITEK
|
| PTB20111 |
85 Watts, 860-900 MHz Cellular Radio RF Power Transistor
|
ERICSSON[Ericsson]
|
