| PART |
Description |
Maker |
| TC58BVG1S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TH58BVG3S0HTAI0 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BYG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG0S3HBAI6 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
| KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 |
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM372V410CS KMM372V400CK KMM372V400CS KMM372V410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
