| PART |
Description |
Maker |
| BR93L46-W BR93L46F-W BR93L46FJ-W BR93L46FV-W BR93L |
Microwire BUS 1Kbit(64 x 16bit) EEPROM
|
Rohm
|
| BR93A66RFJ-W BR93A66FJ-W BR93A66F-W BR93A66RF-W BR |
Microwire BUS 4Kbit(256 x 16bit) EEPROM
|
ROHM[Rohm]
|
| BR93H56RFJ-W BR93H56RF-W BR93H56-W |
Microwire Bus 2Kbit (128 x 16bit) EEPROM
|
ROHM[Rohm]
|
| M66307FP M66307SP M66307E |
From old datasheet system
LINE SCAN BUFFER with 16BIT MPU BUS COMPATIBLE LINE SCAN BUFFER with 16-BIT MPU BUS COMPATIBLE INPUTS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TB62708N EE08582 |
16BIT SHIFT REGISTER / LATCHES & CONSTANT CURRENT SOURCE DRIVER
From old datasheet system
16BIT SHIFT REGISTER, LATCHES & CONSTANT CURRENT SOURCE DRIVERS
|
Toshiba Semiconductor
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| TB62701N E004109 |
16BIT SHIFT REGISTER / LATCH & CONSTANT CURRENT DRIVERS
16BIT SHIFT REGISTER, LATCH & CONSTANT CURRENT DRIVERS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| W982516AH-75 W982516AH75L W982516AH-7 W982516AH-8H |
4M x 4 BANKS x 16BIT SDRAM
|
WINBOND[Winbond]
|
| M12L16161A-5TG2Q M12L16161A-7TG2Q M12L16161A2Q |
512K x 16Bit x 2Banks
|
Elite Semiconductor Memory Technology Inc.
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
| AK535505 AKD5355 |
Low Power 16bit ツヒ ADC
|
Asahi Kasei Microsystems
|
