PART |
Description |
Maker |
ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
PJS6602 |
20V Complementary Enhancement Mode MOSFET
|
Pan Jit International I...
|
DMC2020USD-13 |
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
|
Diodes Incorporated
|
ATS277SA ATS276IS |
3.5-20V complementary output hall effect latch
|
ATC Analog Technology
|
2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
FDS9934C FDS9934CNL |
Dual N- and P-Channel enhancement mode power field effect transistors 6.5 A, 20 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 20V Complementary PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
BFT70 BFX80 BFX36 BFX11 BFX79 BFX81 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-18 TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 60V V(BR)CEO | 200MA I(C) | TO-77 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 200MA I(C) | TO-77 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | TO-78 晶体管|晶体管|一对|互补| 60V的五(巴西)总裁| 600毫安一(c)|7 TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 20V V(BR)CEO | 200MA I(C) | TO-77 晶体管|晶体管|一对|互补| 20V的五(巴西)总裁| 200mA的一(c)|7
|
TT electronics Semelab, Ltd.
|