PART |
Description |
Maker |
2SC2482 |
isc Silicon NPN Pow Transistor
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Inchange Semiconductor ...
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FMMT493A |
SOT23 60V NPN SILICON PLANAR
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Diodes Incorporated
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SDT13204 SDT1617 SDT1618 SDT1621 SDT1622 SDT1623 S |
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | NPN | 175V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 125V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 5A I(C) | TO-3
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 10A I(C) | TO-39 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-111 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 550V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-66 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | STR-10 TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-210AC TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 10A I(C) | TO-66 TRANSISTOR | BJT | NPN | 750V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 5A I(C) | TO-3 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 40V的五(巴西)总裁| 5A条一c)|11 晶体管|晶体管|叩| 80V的五(巴西)总裁| 5A条一c)|11 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 10A条一(c)|10AC TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-5 晶体管|晶体管|叩| 50V五(巴西)总裁| 5A条一(c)| TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 10A I(C) | TO-210AC 晶体管|晶体管|叩| 400V五(巴西)总裁| 10A条一(c)|10AC
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Serpac Electronic Enclosures Atmel, Corp. AUK, Corp.
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2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB 60V/7A High-Speed Switching Applications
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SANYO[Sanyo Semicon Device]
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2SB1118 2SD1618 2SD1616AK 2SD1616U |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92 PNP/NPN Epitaxial Planar Silicon Transistors Low-Voltage High-Current Amplifier, Muting Applications
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Sanyo
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2SC1881K |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB Silicon NPN Darlington Transistor
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Hitachi Semiconductor
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
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Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
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2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|20VAR Low Frequency Transistor (60V, 3A) Low Frequency Transistor (60V/ 3A)
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PCA Electronics, Inc. Rohm CO.,LTD.
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2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W.
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USHA India LTD
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2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING Low freq. power amp., medium-speed switching transistor
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NEC Corp. NEC Electronics NEC[NEC]
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BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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