| PART |
Description |
Maker |
| STGW20NC60VD |
N-CHANNEL 30A - 600V TO-247 HYPERFAST POWERMESH IGBT
N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 6MBI30F-060 |
IGBT(600V/30A)
|
Fuji Electric
|
| FGH30N60LSD |
600V, 30A, PT IGBT
|
Fairchild Semiconductor
|
| NGTG30N60FW |
IGBT only 600V 30A PFC
|
ON Semiconductor
|
| STGW30NB60HD |
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT
N-CHANNEL 30A - 600V TO-247 PowerMESH TM IGBT
|
STMicroelectronics
ST Microelectronics
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| U30D30 U30D40 U30D50 U30D60 U30D40A |
Switchmode dual ultrafast power rectifier, 30A, 400V, 50ns
POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
| SKP10N60A SKB10N60A SKW10N60A |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 10A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 10A 600V TO247AC IGBT Diode
IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT Diode
|
Infineon Technologies AG
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
