| PART |
Description |
Maker |
| TC58NYG0S3HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NVG2S0FTA00 |
SLC NAND
|
TOSHIBA
|
| TH58NVG5S0FTAK0 |
SLC NAND
|
TOSHIBA
|
| TH58NYG3S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| TC58NYG2S0HBAI4 |
SLC NAND
|
TOSHIBA
|
| S34ML01G1 S34ML04G1 S34ML02G1 |
(S34ML01G1 - S34ML04G1) SLC NAND Flash Memory
|
Spansion
|
| EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive
NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
| TC58NVG0S3HBAI4 TC58NVG1S3HTA00 TC58NVG0S3HBAI6 TC |
NAND Flash Memory(SLC Middle Capacity)
NAND Flash Memory(SLC Middle Capacity)
|
Toshiba Semiconductor
|
| ST6294M8 |
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
NAND Flash Memory; Density: 8Gb; Organization: 1Gbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 3.3V; Operating Temperature Range: 0° to 70°C; Package: 48-TSOP
|
|
| 5962F9863101VXC ACS30K ACS21D ACS30KMSR-03 ACS21K |
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, CDFP14
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, UUC11
RES, NETWORK SMT 100R 5% 1/16W 25V, 0603X4
Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp.
Intersil Corporation
|
| DM54H20J DM54H20J_883 DM54H20J_883B DM54H20J_883C |
Single 8-input NAND Gate 8输入与非
Dual 4-input NAND Gate 4输入与非
CERAMIC CHIP/MIL-PRF-55681 陶瓷芯片/mil-prf-55681
Quad 2-input NAND Gate 输入与非
Dual 4-input NAND Gate 输入与非
Triple 3-input NAND Gate
Dual4-inputNANDGate
|
Cypress Semiconductor, Corp.
Rochester Electronics, LLC
TE Connectivity, Ltd.
|
| M38510/30009B2A M38510/30009BAA M38510/30009BAB M3 |
Single 8-input NAND Gate
Dual 4-input NAND Gate
Quad 2-input NAND Gate
Triple 3-input NAND Gate 3输入与非
Triple 3-input NAND Gate 输入与非
|
ITT, Corp.
Linear Technology, Corp.
Bel Fuse, Inc.
|
