| PART |
Description |
Maker |
| TA060-120-45-30 |
6.0 ?12.0 GHz 30dBm Amplifiers
|
Transcom, Inc.
|
| TA020-040-42-38 |
2.0 ?4.0 GHz 38dBm Amplifiers
|
Transcom, Inc.
|
| BFQ75 Q62702-F803 |
PNP SILICON RF TRANSISTOR (FOR BROADBAND AMPLIFIERS UP TO 2 GHZ AT COLLECTOR CURRENTS FROM 5 MA TO 30 MA.)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NE552R479A NE552R479A-T1 NE552R479A-T1-A NE552R479 |
3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS
|
California Eastern Labs
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks Silicon Bipolar Amplifiers
|
Analog Devices
|
| HMC552LP4 HMC552LP4E |
GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 1.6 - 3.0 GHz
Analog & Mixed-Signal Processing -> Amplifiers
|
Hittite Microwave Corporation
|
| BFR93P Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F776 A0535 BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFQ71 Q62702-F775 A0534 |
From old datasheet system
NPN Silicon RF Transistor (For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group]
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
