| PART |
Description |
Maker |
| FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SHD617112BN SHD617112BP SHD617112P SHD617112AN SHD |
HERMETIC SILICON CARBIDE RECTIFIER 10 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| C4D15120A-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SHD625061 SHD625061P SHD625061D SHD625061N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| SHD626031 SHD626031P SHD626031D SHD626031N |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| CVFD20065A |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SHD674062 SHD674062B |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
| D674122 |
20 A, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SHD62605110 |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON SEMICONDUCTOR
|
|
