| PART |
Description |
Maker |
| SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极
From old datasheet system
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
| STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| C3D02060E-13 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| GC2X50MPS06-227 |
Silicon Carbide Schottky Diode
|
GeneSiC Semiconductor, ...
|
| C4D08120E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| SDB05S120 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
|
