| PART |
Description |
Maker |
| FCX658A |
400 Volt VCEO, Optimised hfe characterised upto 200mA
|
TY Semiconductor Co., Ltd
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| BCP51115 |
45 V, 1 A PNP medium power transistors - Complement: BCP54 ; fT min: 115 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1300 mW; VCEO max: 45 V; Package: SOT223 (SC-73); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX56 BCX56135 |
80 V, 1 A NPN medium power transistors - fT min: 130 MHz; hFE max: 250 ; hFE min: 40 ; I<sub>C</sub> max: 1000 mA; Polarity: NPN ; Ptot max: 1300 mW; VCEO max: 80 V; Package: SOT89 (MPT3; UPAK); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| FMMT455 |
140 Volt VCEO, 1 Amp continuous current
|
TY Semiconductor Co., Ltd
|
| LMBTA44LT1G |
NPN EPITAXIAL PLANAR TRANSISTOR High Breakdown Voltage: VCEO=400
|
Leshan Radio Company
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| 1SMA45AT3 1SMA12AT3 1SMA9.0AT3 1SMA10 1SMA10AT3 1S |
400W Zener Suppressor
400 Watt Peak Power Zener Transient Voltage Suppressors 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ONSEMI[ON Semiconductor]
|
| CSB624 |
0.200W General Purpose PNP SMD Transistor. 25V Vceo, 0.700A Ic, 110 - 400 hFE. Complementary CSD596
|
Continental Device India Limited
|
| P4KE P4KE9.1CA P4KE56CA P4KE250 P4KE6.8CA P4KE7.5C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) 玻璃钝化结瞬态电压抑制器（电 6.840伏特400瓦峰值功.0瓦稳态）
Single Output LDO, 750mA, Fixed(2.5V), Fast Transient Response, Power Good (PG) Output 20-HTSSOP -40 to 125 玻璃钝化结瞬态电压抑制器（电 6.840伏特00瓦峰值功.0瓦稳态）
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE - 6.8 TO 440 Volts 400 Watt Peak Power 1.0 Watt Steady State) 玻璃钝化结瞬态电压抑制器（电 6.8440伏特00瓦峰值功.0瓦稳态）
|
PanJit International, Inc.
Pan Jit International Inc.
Pan Jit International I...
|
| TFMAJ14 TFMAJ14A TFMAJ65A TFMAJ90A TFMAJ TFMAJ10 T |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE)
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) 玻璃钝化的瞬态电压抑制器00瓦峰值功.0瓦稳态）
CONNECTOR ACCESSORY
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:22-35 RoHS Compliant: No
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:24-29 RoHS Compliant: No
|
RECTRON LTD
RECTRON[Rectron Semiconductor]
|
