| PART |
Description |
Maker |
| Q67100-Q1135 Q67100-Q1136 Q67100-Q1143 Q67100-Q112 |
3.3V 4M x 4-Bit EDO-Dynamic RAM 3.3 4米4位江户动态随机存储器
High-Speed Fully-Differential Amplifiers 8-SOIC -40 to 85 4M X 4 EDO DRAM, 70 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 50 ns, PDSO24
3.3V 4M x 4-Bit EDO-Dynamic RAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
http://
SIEMENS A G
SIEMENS AG
|
| HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
| Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
| HM5165405F HM5164405F |
64 M EDO DRAM (16-Mword ×4-bit)(64M EDO DRAM (16-M×4-)
|
Hitachi,Ltd.
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HY5118164CSLTC-60 HY5116164CJC-80 |
1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 80 ns, PDSO42
|
HYNIX SEMICONDUCTOR INC
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| GM71C18163CLT-6 GM71C18163CLJ-7 GM71C18163CLT-7 |
1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 70 ns, PDSO42
1M X 16 EDO DRAM, 70 ns, PDSO44
|
HYNIX SEMICONDUCTOR INC
|
| HYM564214AH-60 HYM572103LN-70 HYNIXSEMICONDUCTORIN |
2M X 64 EDO DRAM MODULE, DMA200
1M X 72 FAST PAGE DRAM MODULE, DMA168
2M X 64 FAST PAGE DRAM MODULE, DMA72
1M X 64 EDO DRAM MODULE, DMA72
2M X 32 EDO DRAM MODULE, DMA72
|
HYNIX SEMICONDUCTOR INC
|
