| PART |
Description |
Maker |
| STL36N55M5 |
N-channel 550 V, 0.066 Ohm typ., 22.5 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
|
ST Microelectronics
|
| STW36N55M5 STP36N55M5 |
N-channel 550 V, 0.06 Ohm, 33 A, MDmesh(TM) V Power MOSFET in TO-220 package
N-channel 550 V, 0.06 typ., 33 A MDmesh V Power MOSFET in TO-220 and TO-247 packages
|
ST Microelectronics
STMicroelectronics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| 2SK3596-01L 2SK3596-01S 2SK3596-01SJ |
N-CHANNEL SILICON POWER MOSFET 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics
ST Microelectronics
|
| STD9NM40N STP9NM40N |
N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh?II Power MOSFET in DPAK and TO-220 packages
N-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK package
|
STMicroelectronics
ST Microelectronics
|
| 066392U063JT2 066R562U063JT2 066X822U063JT2 066R12 |
Type 066/066R 85 ∑C & 105 ∑C, Standard, Axial Leaded, Aluminum
Type 066/066R 85 °C & 105 °C, Standard, Axial Leaded, Aluminum
Type 066/066R 85 掳C & 105 掳C, Standard, Axial Leaded, Aluminum
Type 066/066R 85 隆?C & 105 隆?C, Standard, Axial Leaded, Aluminum
Type 066/066R 85 °C & 105 °C, Standard, Axial Leaded, Aluminum
|
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|
| STW15N95K5 STF15N95K5 STP15N95K5 |
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-247 package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 950 V, 0.41 Ohm typ., 12 A SuperMESH(TM) 5 Power MOSFET in TO-220 package
|
ST Microelectronics
|
| VTS3186 VTS3086 |
Process photodiode. Isc = 80 microA(typ), Voc = 0.45 mV(typ) at H = 1000 lux, 2850 K.
|
PerkinElmer Optoelectronics
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
|
