| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLA1011S-200 BLA1011-200 BLA1011-200.112 LA1011-20 |
Avionics LDMOS transistor BLA1011S-200<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF6G10L-40BRN |
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF25M612 BLF25M612G |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF7G21LS-160 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLP05H6110XR-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
