PART |
Description |
Maker |
10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
FQI5N60C FQB5N60C FQB5N60CTM |
600V N-Channel MOSFET 4.5 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFPC60LC-P IRFPC60LC-PPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247SM package TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC TO-247AC, 3 PIN
|
International Rectifier Vishay Intertechnology, Inc.
|
IRFPC40 IRFPC40PBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A)
|
IRF[International Rectifier]
|
IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode 600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package 600V Single N-Channel HEXFET Power MOSFET in a I-Pak package SMPS MOSFET Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
|
IRF[International Rectifier]
|
APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
|
IRFBC40 IRFBC42 FBC40 |
6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs 6.2A.4A00V的,1.2.6 Ohm的N通道功率MOSFET
|
Harris Semiconductor International Rectifier Harris Corporation Harris, Corp.
|
STP5NK60Z STP5NK60ZFP STD5NK60ZT4 STD5NK60Z STP5NK |
N-CHANNEL 600V - 1.2 OHM - 5A TO-220/TO-220FP/DPAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 600V - 1.2 OHM - 5A TO-220/TO-220FP/DPAK ZENER-PROTECTED SUPERMESH POWER MOSFET N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESHPower MOSFET N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?⑿ower MOSFET N-CHANNEL 600V - 1.2W - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH?Power MOSFET
|
ST Microelectronics STMicroelectronics
|