| PART |
Description |
Maker |
| MJ15001 MJ15002 ON1979 NH15002 |
15 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS
|
MOTOROLA INC
Motorola Inc
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2STW446808 2STW4468 |
10 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-247AA
High power NPN epitaxial planar bipolar transistor
|
STMicroelectronics
|
| STZT5550 |
0.6 A, 140 V, NPN, Si, POWER TRANSISTOR
|
STMICROELECTRONICS
|
| 2N3442 ON0039 |
Hlgh -Power lndustrlal Translsrors
From old datasheet system
10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS
|
Motorola, Inc.
ON Semi
|
| TDA4605 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistors
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986
15 A, 140 V, NPN, Si, POWER TRANSISTOR
16 A, 80 V, PNP, Si, POWER TRANSISTOR
16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola
AMERICAN MICROSEMICONDUCTOR INC
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 2N5551 2N5550 |
600 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Si-Epitaxial Planar Transistors
|
DIOTEC SEMICONDUCTOR AG
http://
|
| SF0140BA02393S |
140 MHz SAW Bandpass Filter 72 MHz bandwidth
From old datasheet system
140 MHz Low Loss SAW Filters
|
Integrated Circuit Systems
ICS
|
| APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| STS3C3F30L |
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFETII POWER MOSFET
N-CHANNEL 30V - 0.050 OHM -3.5A P-CHANNEL 30V - 0.140 OHM - 3A SO-8 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.050 ohm - 3.5A SO-8 P-CHANNEL 30V - 0.140 ohm - 3A SO-8 STripFET?/a> II POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
