| PART |
Description |
Maker |
| LGL29K-G2J1-24-Z Q65110A1746 |
Version 1.0 (Replacement in due course)
|
OSRAM GmbH
|
| STN4536 |
Due N Channel Enhancement Mode MOSFET
|
Stanson Technology
|
| AOK20B120E2 |
Minimal gate spike due to high input capacitance
|
Alpha & Omega Semicondu...
|
| IPT1608-SEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0806-SEI |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| IPT0408-05A |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
|
| ASJD1200R045 |
Positive Temperature Coeffi cient for Ease of Paralleling
|
Micross Components
|
| IPT1208-SEF IPT1208-TEF IPT1208-CEF IPT1208-BEF |
High current density due to double mesa technology
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., LTD.
IP SEMICONDUCTOR CO., L...
|
| PIC16F873T-10E/SO PIC16F873T-20/SO PIC16F873T-20I/ |
A newer device is available. Please consider PIC16F873A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F877A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F874A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
A newer device is available. Please consider PIC16F876A. This powerful (200 nanosecond instruction execution) yet easy-to-program ...
8-bit CMOS FLASH microcontroller
|
Microchip
|
| MCP111 MCP112 MCP111-195 MCP112T-475E MCP111T-195I |
The MCP111/112 Series are CMOS voltage detectors are well suited for portable, consumer electrics applications due to the extremely ...
Micropower Voltage Detector
|
MICROCHIP[Microchip Technology]
|
| IPT1206-CEB IPT1206-SEB IPT1206-TEB |
High current density due to double mesa technology
|
IP SEMICONDUCTOR CO., L...
|
| G310 G310-ST310 |
Anti-visible rays due to visible ray cut resin for detector type
connector type
|
KODENSHI KOREA CORP.
|
