| PART |
Description |
Maker |
| FZT853 |
Extremely low equivalent on-resistance; RCE(sat) 44mù at 5A, 6 Amps continuous current, up to 20 Amps peak current
|
TY Semiconductor Co., Ltd
|
| PMV31XN PMV31XN-01 |
uTrenchMOS (tm) extremely low level FET
UTrenchMOS extremely low level FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PMF370XN |
N-channel mTrenchMOS extremely low level FET
N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| FMMTL717 |
Medium Power Transistor
Very low equivalent on-resistance;RCE(sat)=160mU at 1.25A
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| STP12N60M2 |
Extremely low gate charge
|
STMicroelectronics
|
| STD11N65M2 |
Extremely low gate charge
|
STMicroelectronics
|
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| AP2121 |
150mA EXTREMELY LOW NOISE LDO REGULATOR
|
BCD
|
| GFC150 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
| AP2126 |
EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD
|
| GFC054 |
N Channel Power MOSFET with extremely low RDS(ON)
|
Gunter Seniconductor GmbH.
|
