PART |
Description |
Maker |
0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
NE5550279A-T1 NE5550279A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
NE5550979A-T1A-A NE5550979A-T1-A |
Silicon Power LDMOS FET
|
California Eastern Labs
|
NE55410GR07 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Labs
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
MRF9745T1 |
HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
|
Motorola, Inc
|
PTFA211801E PTFA211801E-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA260451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz
|
Infineon Technologies AG
|
PXAC243502FV-V1 |
High Power RF LDMOS FET 350W, 28V, 2300 - 2400 MHz
|
Wolfspeed
|
PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
PTFB082817FH |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz
|
Infineon Technologies AG
|
PTFA211001E |
Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz
|
Infineon Technologies AG
|