| PART |
Description |
Maker |
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3
270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc.
ZETEX PLC
DIODES INC
|
| AP28G45EM |
N-CHANNEL INSULATED GATE 450 V, N-CHANNEL IGBT
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| LC-1002 |
50 A, 450 V, N-CHANNEL IGBT
|
POWERTECH INC
|
| STD2NC45-109 |
N-channel 450 V, 4.1 Ω, 1.5 A, IPAK SuperMESH Power MOSFET
|
STMicroelectronics
|
| STN3N45K3 |
N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3 Power MOSFET
|
STMicroelectronics
|
| SXVVP0104N2 SJVP0104N9 SCVP0104N9 SCVP0106N2 |
450 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
250 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-52
450 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
SUPERTEX INC
|
| M57788HR |
MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO
450-470MHz / 13.5V / 47W / FM MOBILE RADIO
450-470MHz, 13.5V, 47W, FM MOBILE RADIO 45070MHz3.5V7W配合，调频移动通信
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| AWT6388 AWT6388RM20P9 |
450 MHz - 460 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS INC
ANADIGICS, Inc
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| KD224575 |
Dual Darlington Transistor Module (75 Amperes/600 Volts) 75 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
