| PART |
Description |
Maker |
| 4CX300Y 4CX300Y-8561 4CX300Y8561 |
RF amplifier
Plate Dissipation (Max.) 400 Watts Screen Dissipation (Max.) 8 Watts Grid Dissipation (Max.) 1 Watt
|
Communications & Power Industries, Inc.
List of Unclassifed Manufacturers
ETC
|
| FZT491 |
Power Dissipation: PC=2W, Continuous Collector Current: IC=1A
|
TY Semiconductor Co., Ltd
|
| BAS16T |
Power dissipation (Ta mb=25 ) PD 150 mW Forward Current IF 75 mA
|
TY Semiconductor Co., Ltd
|
| FMMT624 |
Collector current:IC=1A, Power dissipation :PC=625mW
|
TY Semiconductor Co., Ltd
|
| FZT489 |
Power Dissipation: PC=2W, Continuous Collector Current: IC=1A
|
TY Semiconductor Co., Ltd
|
| SMCJ6.0C SMCJ58CA SMCJ26CA SMCJ75CA SMCJ60C SMCJ16 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
GT 7C 7#12 SKT RECP WALL
Bipolar Transistor; Transistor Polarity:N Channel; Power Dissipation:0.55W; C-E Breakdown Voltage:32V; DC Current Gain Min (hfe):60; Collector Current:1A; DC Current Gain Max (hfe):175; Power (Ptot):550mW
|
Bytes
|
| D12000W |
Low power dissipation
|
Nell Semiconductor Co.,...
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 706FSR330XHBF 187FSR310XJAA 556FSR310XG3JB 306FSR3 |
Reduced case size - High voltage ?Low Leakage ?low dissipation
Reduced case size - High voltage ?Low Leakage ?low dissipation
|
Illinois Capacitor, Inc...
|
| 2SD1620 |
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
|
TY Semiconductor Co., Ltd
|
