PART |
Description |
Maker |
IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五(巴西)直| 90A型(丁)|51AA HEXFET? Power MOSFET SMPS MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
FDA24N50 |
500V N-Channel MOSFET N-Channel MOSFET; Package: TO-3PN; No of Pins: 3; Container: Rail 24 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 500V, 24A, 0.19ヘ N-Channel MOSFET 500V, 24A, 0.19Ω
|
Fairchild Semiconductor, Corp.
|
DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL(产品符 CSA标准 CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD MOSFET N-CH 500V 48A SOT-227B MOSFET N-CH 200V 180A SOT-227B MOSFET N-CH 300V 130A SOT-227B MOSFET N-CH 500V 64A SOT-227 MOSFET N-CH 70V 200A SOT-227B
|
http:// HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
|
IXTA10N60P IXTP10N60P IXTI10N60P |
MOSFET N-CH 600V 10A D2-PAK 10 A, 600 V, 0.74 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PolarHV Power MOSFET
|
Infineon Technologies AG IXYS CORP IXYS Corporation
|
IRFP17N50LPBF |
SMPS MOSFET HEXFET?Power MOSFET SMPS MOSFET HEXFET㈢Power MOSFET
|
International Rectifier
|
IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IXTA4N60P IXTU4N60P IXTY4N60P |
MOSFET N-CH 600V 4A D2-PAK 4 A, 600 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB PolarHV Power MOSFET
|
IXYS, Corp. IXYS Corporation
|
IRFP260PBF IRF6618TRPBF IRF6618PBF |
HEXFET? Power MOSFET DirectFET?Power MOSFET ? DirectFET㈢Power MOSFET ㈢ HEXFET㈢ Power MOSFET
|
International Rectifier
|
IRFPS40N50LPBF |
46 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-274AA HEXFET㈢Power MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
|