| PART |
Description |
Maker |
| FDS887607 FDS8876 |
N-Channel PowerTrench? MOSFET 30V, 12.5A, 8.2mΩ
N-Channel PowerTrench庐 MOSFET 30V, 12.5A, 8.2m惟
N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ
|
Fairchild Semiconductor
|
| FDMS867408 FDMS8674 |
N-Channel PowerTrench垄莽 MOSFET 30V, 21A, 5.0m楼?
N-Channel PowerTrench庐 MOSFET 30V, 21A, 5.0m惟
N-Channel PowerTrench? MOSFET 30V, 21A, 5.0mΩ
|
Fairchild Semiconductor
|
| HUF76105DK8 FN4380 HUF76105DK8T |
5A/ 30V/ 0.050 Ohm/ Dual N-Channel/ Logic Level UltraFET Power MOSFET
From old datasheet system
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
5A, 30V, 0.050 Ohm, Dual N-Channel,Logic Level UltraFET Power MOSFET(5A, 30V, 0.050 Ω,双N沟道,逻辑电平,UltraFET功率MOS场效应管)
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5A I(D) | SO 5 A, 30 V, 0.072 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
Intersil Corporation
Intersil, Corp.
|
| FDMS9620S |
Dual N-Channel PowerTrench? MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ
Dual N-Channel PowerTrench㈢ MOSFET Q1: 30V, 16A, 21.5mヘ Q2: 30V, 18A, 13mヘ
|
Fairchild Semiconductor
|
| IRL3103L IRL3103S IRL3103STRR IRL3103STRL |
30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)
|
IRF[International Rectifier]
|
| FDD6690S |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|52AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 30A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五（巴西）直| 3A条（丁）|63AB
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五（巴西）直| 30A条（丁）|的SOT - 186
|
Renesas Electronics, Corp.
NXP Semiconductors N.V.
|
| NTD4909N-35G NTD4909N-1G |
Power MOSFET, Single N-CH 30V, IPAK Trimmed Leads 8.8 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
30V N-Channel PowerTrench MOSFET 8.8 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| FDB8160 FDB8160-F085 FDB8160F085 |
30V N-Channel PowerTrenchMOSFET
N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ
|
Fairchild Semiconductor
|
| SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=-30V Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm
SHROUD, PRIVACY; RoHS Compliant: Yes
|
IRF[International Rectifier]
|
|
