| PART |
Description |
Maker |
| AS6C3216 AS6C3216-55TIN |
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| KM23V32005BT KM23V32005BET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DA28F320 |
IC,EEPROM,NOR FLASH,2MX16/4MX8,CMOS,SOP,56PIN,PLASTIC
|
intel
|
| K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32）的CMOS掩膜ROM
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|
| EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
| K5T6432YT K5T6432YTM-T310 |
64Mbit (4Mx16) four bank NOR flash memory / 32Mbit (2Mx16) UtRAM, 100ns
Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
