| PART |
Description |
Maker |
| 2N2324A |
SCR, V(DRM) = 100 V TO 199.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N3005 |
SCR, V(DRM) < 50 V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4213 |
SCR, V(DRM) = 50V TO 99.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4108 |
SCR, V(DRM) = 50V TO 99.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N4216 |
SCR, V(DRM) = 200V TO 299.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N6174 |
SCR, V(DRM) = 600V TO 699.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N2013 |
SCR, V(DRM) = 300 V TO 399.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
| 2N4172 |
SCR, V(DRM) = 400V TO 499.9V
|
New Jersey Semi-Conductor Products, Inc.
|
| L4006L9 L6004L9 L201E7 |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口T）的有效值|20
TRIAC|200V V(DRM)|1A I(T)RMS|TO-92 可控硅| 200伏五（DRM）的| 1A条口（T）的有效值|2
|
Boca Semiconductor, Corp.
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| BT151S BT151S-500L BT151S-500R BT151S-650L BT151S- |
SCR
Thyristors - I<sub>GT</sub>: 15 mA; I<sub>T</sub> (R<sub>MS</sub>): 12 A; V<sub>DRM</sub>: 800 V; Package: SOT428 (DPAK); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
