PART |
Description |
Maker |
GBAV151 |
The GBAV151 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
1SS184 |
Ultra High Speed Switching
|
WILLAS ELECTRONIC CORP
|
KTK5131S |
SMOS FET/ Analog Switch Application N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH) N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS18107 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS18407 1SS184 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
HN4D01JU-14 |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
HN1D03F |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
1SS361FV |
Ultra-High-Speed Switching Applications
|
Toshiba Semiconductor
|
1SS36007 1SS360 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|