| PART |
Description |
Maker |
| MIP2F10MS MIP2F20MS |
High-Performance IPD
|
Panasonic
|
| MIP2E4D |
High-Performance IPD for Battery Chaegers
|
Matsushita Electric Works(Nais)
|
| EVAL-AD5560EBUZ AD5560JSVUZ-REEL AD5560JBCZ AD5560 |
1.2 A Programmable Device Power Supply
1.2 A Programmable Device Power Supply with Integrated 16-Bit Level Setting DACs
|
Analog Devices
|
| XCR22V10 XCR22V10-7SO24 XCR22V10-10SO24 XCR22V10-7 |
5V Zero Power, TotalCMOS, Universal PLD Device EE PLD, 7.5 ns, PQCC28
5V Zero Power, TotalCMOS, Universal PLD Device 5V的零功率，TotalCMOS，通用PLD器件
5V Zero Power, TotalCMOS, Universal PLD Device EE PLD, 10 ns, PDSO24
5V Zero Power, TotalCMOS, Universal PLD Device EE PLD, 7.5 ns, PDSO24
|
Xilinx, Inc.
XILINX INC
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| 2SA886 2SA0886 |
Power Device - Power Transistors - Others
Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0949A 2SB949 2SB949A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1745 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1964 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1707 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0940 2SB0940A 2SB940A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
