| PART |
Description |
Maker |
| KVR266X64SC25/128 |
128MB 266MHz DDR Non-ECC CL2.5 SODIMM 128MB66MHz的复员非ECC CL2.5的SODIMM
|
Electronic Theatre Controls, Inc.
|
| VL-MM7-2SBN |
2GB 256Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| VL-MM8-1EBN |
1GB 128Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN
|
List of Unclassifed Manufacturers
|
| VL-MM9-2EBN |
2GB 256Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| 9864AASA W9864AASA |
64MB (8M x 64) SDRAM SO-DIMM MODULE(64MB (8M x 64)小型双列直插同步动态RAM模块)
From old datasheet system
|
Winbond Electronics Corp
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| COM-BYTC2 COM-BYTC2-A10-0001 |
DDR3L SODIMM x 1, up to 8 GB, non-ECC Support
|
AAEON Technology
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KVR533D2E4K2/1G |
1024MB 533MHz DDR2 ECC CL4 DIMM (Kit of 2) 1024MB33 ECC DDR2记忆CL4内存（包2
|
Vishay Intertechnology, Inc.
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| NA570L-R8GI-H81-US |
Supports 32 GB DDR3-1600 non-ECC/ECC memory
|
Axiomtek Co., Ltd.
|
