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AON4421 - P-Channel Enhancement Mode Field Effect Transistor

AON4421_4844817.PDF Datasheet


 Full text search : P-Channel Enhancement Mode Field Effect Transistor
 Product Description search : P-Channel Enhancement Mode Field Effect Transistor


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From old datasheet system
P-Channel Enhancement-Mode MOSFET Transistors
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STB55NE06 5405 N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
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From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
TN2410L VN2406E N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V,夹断电.18AN沟道增强型MOSFET晶体
N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
Vishay Intertechnology,Inc.
AP15P15GM-HF AP15P15GM-HF14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
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Anpec Electronics Corporation
Anpec Electronics, Corp.
NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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Vishay Intertechnology,Inc.
ETC
STB55NE06L 5722 N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET(不适用沟道增强模式功率MOSFET的)
STMICROELECTRONICS[STMicroelectronics]
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APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
 
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