| PART |
Description |
Maker |
| SSE90N06-10P11 |
90A , 60V , RDS(ON) 9.9 m N-Channel Enhancement Mode MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| BSP170P |
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.30
|
Infineon
|
| SPB80P06P SPP80P06P |
SIPMOS Power-Transistor SIPMOS功率晶体
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 23m
|
INFINEON[Infineon Technologies AG]
|
| BSP315P |
SIPMOS Small-Signal-Transistor
Low Voltage MOSFETs - Small Signal MOSFET, -60V, SOT-223, RDSon = 0.80
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F370 |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FGFP90N30TU FGPF90N30 |
300V, 90A PDP IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| PFT906N PFT903N |
THYRISTOR MODULE 90A/300V to 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| FGA90N33ATD |
330V, 90A PDP Trench IGBT
|
Fairchild Semiconductor
|
| FDU6676ASNL FDU6676AS FDU6676ASF071 |
N-Channel PowerTrench SyncFET TM 30V, 90A, 5.8mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| MIMMD90A160DK |
1600V 90A Rectifier Diode Module RoHS Compliant
|
Micross Components
|
| ISL8225MIRZ ISL8225MEVAL2Z JUMPER-3-100 JUMPER2-10 |
ISL8225MEVAL2Z 6-Phase, 90A Evaluation Board Setup Procedure
|
Intersil Corporation
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
