PART |
Description |
Maker |
2SB1184 2SB1185 2SB1243 A5800349 2SB1185F |
Power Transistor (-60V, -3A) From old datasheet system Power Transistor (-60V/ -3A)
|
Rohm
|
CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
HUF76423S3S HUF76423P3 FN4708 HUF76423S3ST HUF7642 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 36A条(丁)|63AB N-Channel NexFET Power MOSFET 8-SON -55 to 150 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
MJE2955 MJE2955T MJE3055T |
NPN Transistor POWER TRANSISTORS(10A /60V /75W) POWER TRANSISTORS(10A,60V,75W) 功率晶体管(10A条,60V5W的)
|
MOSPEC[Mospec Semiconductor] Mospec Semiconductor, Corp. MOSPEC SEMICONDUCTOR CORP.
|
2SD231810 2SD2318 2SD2318TLV |
3000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR CPT3, SC-63, 3 PIN High-current gain Power Transistor (60V, 3A)
|
Rohm
|
OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 8A条一(c)|1
|
Vicor, Corp. Marktech Optoelectronics
|
IRFI064 IRFI064-15 |
Simple Drive Requirements TRANSISTOR N-CHANNEL(Vdss=60V/ Rds(on)=0.017ohm/ Id=45A*) TRANSISTOR N-CHANNEL(Vdss=60V, Rds(on)=0.017ohm, Id=45A*) 60V Single N-Channel Hi-Rel MOSFET in a TO-259AA package
|
International Rectifier
|
STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五(巴西)直| 30A条(丁)|52AA N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET From old datasheet system
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
2SB798 2SB798-T2 2SB798-T1 2SB794L 2SB798DK-AZ 2SB |
1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR MINIMOLD PACKAGE-3 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1.5A I(C) | TO-126 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD Silicon transistor
|
IRC Advanced Film NEC[NEC]
|
2SC5825 |
Power transistor (60V/ 3A) Power transistor (60V, 3A)
|
Rohm
|
2SC5824 |
Power transistor (60V, 3A)
|
Rohm CO.,LTD.
|