| PART |
Description |
Maker |
| BD828-10 BD826-6 BD826-16 BD830-10 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-202
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-202
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1.5AI（丙）|02
|
Analog Devices, Inc.
|
| BDW21A |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:500uA
Bipolar NPN Device in a Hermetically sealed TO3
|
Glenair, Inc.
Seme LAB
|
| D390CH18E3L2 D390CH18E3L3 D390CH18E3L4 D390CH18E3L |
2426 A, 1800 V, SCR
1125 A, 1200 V, SCR, TO-200AB
1950 A, 800 V, SCR, TO-200AC
5087 A, 1600 V, SCR
5087 A, 1800 V, SCR
2749 A, 1800 V, SCR
2749 A, 800 V, SCR
2110 A, 3000 V, SCR
2749 A, 600 V, SCR
1895 A, 1000 V, SCR, TO-200AC
2268 A, 1200 V, SCR
5260 A, 1200 V, SCR
1690 A, 800 V, SCR, TO-200AC
2749 A, 1600 V, SCR
5260 A, 1600 V, SCR
2749 A, 1000 V, SCR
1765 A, 1200 V, SCR, TO-200AC
1765 A, 1600 V, SCR, TO-200AC
2749 A, 1200 V, SCR
2749 A, 400 V, SCR
1030 A, 800 V, SCR, TO-200AB
1715 A, 600 V, SCR, TO-200AC
3140 A, 600 V, SCR
2600 A, 1200 V, SCR
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| DT105N10LOF-A DT105N16KOF-K DT105N16LOF-A DT105N12 |
160 A, 1000 V, SCR MODULE-5
160 A, 1600 V, SCR MODULE-5
160 A, 1200 V, SCR MODULE-5
160 A, 1400 V, SCR MODULE-5
120 A, 800 V, SCR MODULE-5
75 A, 800 V, SCR
100 A, 1600 V, SCR
160 A, 800 V, SCR
160 A, 600 V, SCR
|
Unisonic Technologies Co., Ltd.
|
| MP03XXX190-12 MP03XXX190 MP03XXX190-08 MP03XXX190- |
Phase Control Dual SCR, SCR/Diode Modules 相位控制双可控硅，SCR /二极管模
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| 2N5064AP T107E141 S0510LS253V S1008LS253V EC103A75 |
0.8 A, 200 V, SCR, TO-92
4 A, 500 V, SCR
10 A, 50 V, SCR, TO-220AB
8 A, 100 V, SCR, TO-220AB
0.8 A, 100 V, SCR, TO-92
6 A, 50 V, SCR, TO-220AB
6 A, 100 V, SCR, TO-220AB
4 A, 300 V, SCR, TO-202AB
8 A, 50 V, SCR, TO-202AB
4 A, 50 V, SCR, TO-202AB
10 A, 100 V, SCR, TO-220AB
|
|
| 50RIA40M 50RIA40S90 50RIA120 50RIA80S90M 50RIA 50R |
100V 50A Phase Control SCR in a TO-208AC (TO-65) package
800V 50A Phase Control SCR in a TO-208AC (TO-65) package
1000V 50A Phase Control SCR in a TO-208AC (TO-65) package
400V 50A Phase Control SCR in a TO-208AC (TO-65) package
1600V 80A Phase Control SCR in a TO-208AC (TO-65) package
1200V 50A Phase Control SCR in a TO-208AC (TO-65) package
1400V 80A Phase Control SCR in a TO-208AC (TO-65) package
600V 50A Phase Control SCR in a TO-208AC (TO-65) package
MEDIUM POWER THYRISTORS
Silicon Controlled Rectifier, 80 A, 1600 V, SCR, TO-208AC, TO-65, 2 PIN
|
IRF[International Rectifier]
Vishay Semiconductors
|
| 2SD1061 2SB825 2SB825Q |
50V/7A Switching Applications 50V/7A开关应
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-220AB
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| TTB6C75N08KOF TDB6HK110N06KOF TDB6HK110N12KOF |
60 A, 800 V, SCR
90 A, 600 V, SCR
90 A, 1200 V, SCR
|
|
| TT430N DT95N TD251N |
800 A, 1800 V, SCR
150 A, 600 V, SCR
410 A, 600 V, SCR
|
Infineon Technologies AG
|
|
