| PART |
Description |
Maker |
| UPD784217AY UPD78F4216AYGC-8EU UPD78F4216AYGF-3BA |
MOS INTEGRATED CIRCUIT 马鞍山集成电
(UPD78F4216A / UPD78F4218A) MOS INTEGRATED CIRCUIT
ER 1C 1#12 PIN PLUG
|
NEC, Corp.
NEC Corp.
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| TC55VEM208ASTN55 TC55VEM208ASTN40 TOSHIBACORPORATI |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
524,288-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC55VBM316AFTN TC55VBM316AFTN40 TC55VBM316AFTN55 T |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WKM616AXBN75 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| UPD23C32000A UPDA23C32000 |
MOS IC
MOS INTEGRATED CIRCUIT
|
NEC
|
| UPD16707P PD16707 UPD16707 |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
| UPD166021T1F UPD166021T1F-E1-AY |
MOS INTEGRATED CIRCUIT
|
Renesas Electronics Corporation
|
| UPD78F4216A UPD78F4216AYGF-3BA UPD78F4216AYGC-8EU |
MOS INTEGRATED CIRCUIT
|
NEC[NEC]
|
