PART |
Description |
Maker |
MDI550-12A4 MID550-12A4 |
1200V IGBT module IGBT Modules Short Circuit SOA Capability Square RBSOA IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
VID160-12P1 VIO160-12P1 VDI160-12P1 |
IGBT Modules: Boost Configurated IGBT Modules IGBT Modules in ECO-PAC 2
|
IXYS[IXYS Corporation]
|
VUB145 VUB145-16NO1 VUB116 VUB116-16NO1 |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 95 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
VID50-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
VUB50-16PO1 |
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS
|
TM25RZ-24 TM25RZ-2H TM25EZ-24 TM25EZ-2H TM25RZ/EZ- |
THYRISTOR MODULES HIGH POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
SKM195GB063DN SKM195GAL063DN SKM195GAR063DN |
Superfast NPT-IGBT Modules 250 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
SEMIX553GAR128D SEMIX553GAL128D |
SPT IGBT Modules 540 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
SEMIX653GD176HDC |
Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON[Semikron International]
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|