| PART |
Description |
Maker |
| BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
From old datasheet system
|
NXP Semiconductors
Philipss
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| 1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管（用于电视调谐器的电子调谐）) 硅变容二极管设计电子调谐电视调谐器（硅可变电容二极管（用于电视调谐器的电子调谐）
Silicon Variable Capacitance Diode
|
Sony, Corp.
Sony Corporation
|
| 1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| GC1310 KV1963A KV1953A KV1923A KV1913A1 KV2123 KV1 |
C BAND, 3.9 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 0.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
ENHANCED PERFORMANCE SURFACE MOUNT EPSM垄芒Hyperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?⑷yperabrupt Varactor Diodes TM
ENHANCED PERFORMANCE SURFACE MOUNT EPSM?Hyperabrupt Varactor Diodes TM
C BAND, 16.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
C BAND, 1.5 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| HVL355C |
6.82 pF, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU306C |
Diodes>Variable Capacitance
VARIABLE CAPACITANCE DIODE FOR VHF TUNER
|
Renesas Electronics Corporation
|
| 1N4800A 1N4795B 1N4787A |
100 pF, 17 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
39 pF, 22 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
8.2 pF, 28 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1N4800A 1N4798 |
100 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
68 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 1N4800D 1N4795B 1N4815A 1N5443B |
100 pF, 17 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
39 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
100 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
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