| PART |
Description |
Maker |
| AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS |
DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC
DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料
1M X 16 EDO DRAM, 50 ns, PDSO44
|
Amphenol, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| AS4LC2M8S1 AS4LC2M8S1-10TC AS4LC2M8S1-12TC AS4LC2M |
3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM
3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
| MB8116400A-70 MB8116400A-50 MB8116400A-60 |
CMOS 4 M ×4 BIT
Fast Page Mode DRAM(CMOS 4 M ×4 位快速页面存取模式动态RAM)
CMOS 4 M ?4 BIT Fast Page Mode DRAM(CMOS 4 M ?4 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| MB81V4100C-60 MB81V4100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| AS4C4M4E1 |
4M x 4 CMOS DRAM
|
Alliance Semiconductor
|
| KM41C464 |
CMOS DRAM
|
Samsung Electronics
|
| K4E641612D K4E661612D |
CMOS DRAM
|
Samsung semiconductor
|
