PART |
Description |
Maker |
K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification 16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
M2V64S30DTP-7 M2V64S20DTP-7 M2V64S40DTP-6 M2V64S40 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDU |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
PROMOS TECHNOLOGIES INC
|
M2V64S20BTP-8A M2V64S30BTP-8A M2V64S40BTP-8A |
64M bit Synchronous DRAM
|
Mitsubishi Electric Corporation
|
IS42S16320B-7BL IS42S16320B-7BLI IS42S16320B IS42S |
64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM
|
http:// Integrated Silicon Solution, Inc
|
HYB39S64400CT-7.5 HYB39S64800CT-7.5 HYB39S64800CTL |
64M SDRAM Component 64-MBit Synchronous DRAM
|
Infineon Technologies A...
|
MT18LSDT6472AY-133B1XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
EDE1108ACSE EDE1108ACSE-5C-E EDE1108ACSE-6E-E EDE1 |
64M X 16 SYNCHRONOUS DRAM, 0.4 ns, PBGA84 1G bits DDR2 SDRAM
|
ELPIDA MEMORY INC
|
M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life 64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184 Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp. NEC[NEC]
|