| PART |
Description |
Maker |
| HN3G01J HN3G01 E002017 |
N CHANNEL JUNCTION TYPE FET SILICON NPN EPITAXIAL TYPE TRANSISTOR
From old datasheet system
|
http://
Toshiba Semiconductor
|
| NJW4702 NJW4702SE8 |
From old datasheet system
3ch Laser Diode Driver
|
NJRC[New Japan Radio]
|
| TA8215 TA8215H TA8215L E003747 |
18W BTL x 3CH AUDIO POWER AMPLIFIER
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| M62333FP M62333P M62338FP M62338P M62333E |
From old datasheet system
8-BIT 3CH I2C BUS D-A CONVERTER WITH BUFFER AMPLIFIERS
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| ZNBG4000 ZNBG4000Q16 ZNBG4001 ZNBG4001Q16 ZNBG6000 |
FET BIAS CONTROLLER 场效应管偏置控制
ABSOLUTE MAXIMUM RATINGS
FET BIAS CONTROLLER SPECIALTY ANALOG CIRCUIT, PDSO20
MS3470L14-15S 场效应管偏置控制
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| KGF1313 |
From old datasheet system
Power FET (Plastic Package Type)
|
OKI electronic componet...
OKI[OKI electronic componets]
OKI electronic eomponets
|
| KGF1322 K1322 |
From old datasheet system
Power FET (Ceramic Package Type)
|
OKI[OKI electronic componets]
|
| KGF1633 |
From old datasheet system
Power FET (Plastic Package Type)
|
OKI electronic componets
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
