| PART |
Description |
Maker |
| 2N2906E |
Switching Transistor
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| MP4015 |
Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2425 2SD2425AB3 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-243VAR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
Low freq. power amp., medium-speed switching transistor
|
NEC Corp.
NEC Electronics
NEC[NEC]
|
| PXT2907A PXT2907A/T1 |
TRANSISTOR SWITCHING 晶体管开
PNP switching transistor
|
Elektron Technology PLC
Philips
|
| MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
| BU406-X-T3P-T BU406-X-TA3-T BU406-X-TF3-T BU406-A- |
SILICON NPN SWITCHING TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SILICON NPN SWITCHING TRANSISTOR 硅NPN开关晶体管
|
UNISONIC TECHNOLOGIES CO LTD
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
??『绉???′唤??????
|
| 2N5551G-X-AB3-R 2N5551G-X-T92-B 2N5551G-X-T92-K 2N |
HIGH VOLTAGE SWITCHING TRANSISTOR
600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
HIGH VOLTAGE SWITCHING TRANSISTOR
|
UNISONIC TECHNOLOGIES CO LTD
|
| 2SC3832 |
Silicon NPN Transistor
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍扩散平面晶体管（高压和高速开关晶体管
|
Sanken Electric Co.,Ltd.
|
| NP82N055CHE |
(NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING
|
NEC
|
| GA1A4Z GA1A4Z-T2 GA1A4ZL69-T1 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-323 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 323
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR SUPER MINIMOLD PACKAGE-3
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
Hybrid transistor
|
NEC, Corp.
|
| NP82BN05B5EHE NP82N055CHE NP82N055KHE NP82N055DHE |
MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING
|
NEC Corp.
NEC[NEC]
|
