| PART |
Description |
Maker |
| IDT71V256SA |
Lower Power 3.3V CMOS Fast SRAM
|
IDT
|
| ICS663 663MILFT 663MLF 663MLFT |
PLL BUILDING BLOCK Phase detector and VCO blocks can be used Lower power CMOS process
|
Integrated Device Technology
|
| AP2606GY-HF AP2606GY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP2605GY0-HF AP2605GY0-HF14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
|
| SGB02N12007 SGB02N120 |
Fast IGBT in NPT-technology Lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP9561GM |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP98T06GS-HF |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP2342GK-HF AP2342GK-HF14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9998GI-HF |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9575GP-HF AP9575GS-HF AP9575GP-HF-14 |
Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
