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KBE00F005A-D411 - 512Mb NAND*2 256Mb Mobile SDRAM*2

KBE00F005A-D411_2828794.PDF Datasheet
 Full text search : 512Mb NAND*2 256Mb Mobile SDRAM*2

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KBE00F005A-D411 512Mb NAND*2 256Mb Mobile SDRAM*2
 Samsung Electronic
K9F5608U0C-VIB0 K9F5608Q0C-HIB0 K9F5608U0C-HIB0 K9 TV 3C 3#20 PIN WALL RECP 512Mb/256Mb 1.8 NAND闪存勘误
512Mb/256Mb 1.8V NAND Flash Errata 512Mb/256Mb 1.8 NAND闪存勘误
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
W949D2CBJX6E W949D6CB W949D6CBHX5E W949D6CBHX6G W9 512Mb Mobile LPDDR
 Winbond
EBD52UC8AARA-7A EBD52UC8AARA-7B EBD25EC8AJFA EBD25 512MB DDR SDRAM SO DIMM
256MB Unbuffered DDR SDRAM DIMM
1GB Unbuffered DDR SDRAM DIMM
512MB Registered DDR SDRAM DIMM
256MB DDR SDRAM SO DIMM
512MB Unbuffered DDR SDRAM DIMM
1GB DDR SDRAM SO DIMM
1GB Registered DDR SDRAM DIMM
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
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ELPIDA MEMORY INC
MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
 Micron Technology
W987D6CKJX5G W947D6CKJX5G W989D6CKJX5G W949D6CKJX5 512Mb Mobile LPSDR
   512Mb Mobile LPSDR
 Winbond
HYB25D512800AT-7 HYB25D512800AT-8 HYB25D512160AT-8 512Mb (64Mx8) DDR266A (2-3-3)
512Mb (64Mx8) DDR200 (2-2-2)
512Mb (32Mx16) DDR200 (2-2-2)
512Mb (128Mx4) DDR200 (2-2-2)
512Mb (64Mx8) DDR333 (2.5-3-3) ？的512Mb4Mx8DDR333内存.5-3-3）？
 Electronic Theatre Controls, Inc.
HYS72D32500GR-8-A HYS72D64500GR-8-A HYS72D64500GR- 256MB (32Mx72) PC1600 1-bank
512MB (64Mx72) PC1600 1-bank
512MB (64Mx72) PC2100 1-bank
1GB (128Mx72) PC1600 2-bank
1GB (128Mx72) PC2100 2-bank GB的（128Mx72）PC2100 2银行
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
 Infineon Technologies AG
MT48H16M16LFB5-8G MT48H8M32LFB5-8G MT48H16M16LFB5- 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
 Micron Technology
EM484M3244VBA-8FE EM484M3244VBA-75FE EM484M3244VBA 256Mb (2MBank32) Synchronous DRAM
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 Electronic Theatre Controls, Inc.
 
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