| PART |
Description |
Maker |
| 2SC5077 2SC5077A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| FK18SM-10 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 18 A, 500 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RJK5014DPP-00-T2 RJK5014DPP |
19 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET TO-200FN, 3 PIN
Silicon N Channel MOS FET High Speed Power Switching 通道场效应晶体管高速电源开
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| FS50UM-06 |
BK Precision Triple Output DC Power Supply, Output Voltage: Variable 0-30 VDC, Fixed 12 VDC ( 5 %), Fixed 5 VDC ( 5 %), Output Current: 0-5 A, 0-500 mA, 0-500 mA, Metering Display: 2 Digital 3 Digit LCD, Ammeter Range: 0-.999 A 高速开关使
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| VMO40-05P1 VMO60-05F VMO650-01F |
41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET ECOPAC-4
High dv/dt, Low-trr, HDMOS-TM Family 60 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-240AA
690 A, 100 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
| ZA2CS-500-15W |
High Power Combiner 2 Way-0 50Ω 200 to 500 MHz
High Power Combiner 2 Way-0 50ヘ 200 to 500 MHz
|
Mini-Circuits
|
| ISL83485 ISL83485IB ISL83485IP ISL83483 ISL83488 I |
N-CHANNEL SILICON JUNCTION FET SOT23
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85
3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers LINE TRANSCEIVER, PDSO8
3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers LINE TRANSCEIVER, PDIP8
3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceivers
3.3V Low Power High Speed or Slew Rate Limited RS-485/RS-422 Transceivers
There is no valid match for the device number entered.
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
| TC1426CPA TC1427 TC1427CPA TC1428 TC1428COA TC1427 |
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 600 A rms nominal, ±900 A range 1.2A的双路高速MOSFET驱动
1.2A Dual High-Speed MOSFET Drivers 1.2A的双路高速MOSFET驱动
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. These devices are fabricated using an epitaxial layer to effectively short out the intrinsic parasitic
The TC1426/27/28 are a family of 1.2A dual high- speed drivers. CMOS fabrication is used for low power consumption and high efficiency. ...
|
Microchip Technology, Inc.
MICROCHIP[Microchip Technology]
|
| RF1S4N100SM RFP4N100 FN2457 |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
|
