PART |
Description |
Maker |
HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM 2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics International Business Machines, Corp.
|
HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM 1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM 1M x 16 Bit 1k 5 V 50 ns EDO DRAM -1M x 16-Bit Dynamic RAM 1k Refresh 1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM 2M X 8 EDO DRAM, 60 ns, PDSO28 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp. INTEGRATED SILICON SOLUTION INC
|
AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24 x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块:快速页面模式型与江
|
OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. Oki Electric Industry Co., Ltd.
|
HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
IC41C82002S IC41LV82002S IC41LV82002S-60T IC41C820 |
2Mx8 bit Dynamic RAM with EDO Page Mode DYNAMIC RAM, EDO DRAM
|
Integrated Circuit Solu... ICSI[Integrated Circuit Solution Inc]
|
NN518125LJ-70 NN518125LJ-50 NN518125LJ-60 NN518125 |
x8 EDO Page Mode DRAM
|
|
IC41C16100AS IC41C16100A IC41LV16100AS IC41LV16100 |
DYNAMIC RAM, EDO DRAM 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ICSI[Integrated Circuit Solution Inc]
|