PART |
Description |
Maker |
IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
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International Rectifier
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AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package 100V Single N-Channel HEXFET Power MOSFET in a SO-8 package 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package 20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET 30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET -12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM 1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32 x8 Flash EEPROM x8闪存EEPROM
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Toshiba, Corp. Advanced Micro Devices, Inc. Spansion, Inc.
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IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??) 4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
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MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc. MOTOROLA INC
|
VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IRFBA90N20DPBF |
95 A, 200 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA HEXFET㈢Power MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
IRLU8743PBF IRLR8743PBF |
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA HEXFET㈢Power MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET 2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc. Molex, Inc. VISHAY INTERTECHNOLOGY INC
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IRFL4105 IRFL4105TR |
3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
IRFIZ34E IRFIZ34EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)
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IRF[International Rectifier]
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