| PART |
Description |
Maker |
| IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH05G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH08G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| RB705D |
Diodes > Schottky Barrier Diodes > Surface mounting small signal type
Schottky barrier diode 肖特基势垒二极管
|
ROHM[Rohm]
Rohm Co., Ltd.
|
| MA738 MA2Q738 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
From old datasheet system
|
PANASONIC[Panasonic Semiconductor]
|
| APT10SCD120BCT |
SiC Schottky Diodes
|
Microsemi
|
| SCS206AJ-17 |
SiC Schottky Barrier Diode
|
Rohm
|
| TRS20J120C |
SiC Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SCS240AE2C |
SiC Schottky Barrier Diode
|
Rohm
|
| SCS220KGHR |
SiC Schottky Barrier Diode
|
Rohm
|
