| PART |
Description |
Maker |
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| BFG520W BFG520W_X BFG520W/X |
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| INA-32063 INA-32063-BLK INA-32063-TR2 INA-32063-TR |
3.0千兆赫宽带硅射频放大器（3.0千兆赫宽频带硅射频集成电路放大器
3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 宽频带硅射频集成电路放大
3V Fixed Gain. Wideband Amplifier
|
Agilent(Hewlett-Packard)
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HA2-2602_883 HA-2602883 HA-2602_883 HA-2602/883 HA |
Wideband, High Impedance Operational Amplifier OP-AMP, 5000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8
Wideband, High Impedance Operational Amplifier 宽带，高阻抗运算放大
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BFR93AW |
NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
NPN 5 GHz wideband transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| BFG541 |
NPN 9 GHz wideband transistor
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors
Philips Semiconductors
|
| BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| TCCH-80 |
Wideband RF Choke 50 to 8200 MHz
From old datasheet system
Wideband RF Choke 50 to 8200 MHz 1 ELEMENT, 4 uH, GENERAL PURPOSE INDUCTOR, SMD
|
MINI[Mini-Circuits]
|
| MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|
| HA-2620 HA-2626 HA-2625 |
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=0.5mV
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Rad-Hard
Op Amp, 100MHz, High Input Impedance, Very Wideband, Uncompensated, Offset=3.0mV
|
Intersil
|
